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Vishay Siliconix
SI2315BDS-T1-E3 ImageView larger image
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SI2315BDS-T1-E3

In Stock 122704 pcs Reference Price(In US Dollars)
1+
$0.42
10+
$0.35
100+
$0.26
500+
$0.21
1000+
$0.16
Manufacturer Part Number:
SI2315BDS-T1-E3
Manufacturer / Brand
Vishay Siliconix
Part of Description:
MOSFET P-CH 12V 3A SOT23-3
Datasheets:
SI2315BDS-T1-E3(1).pdfSI2315BDS-T1-E3(2).pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, 122704 pcs Stock Available.
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

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Part Number SI2315BDS-T1-E3
Manufacturer / Brand Vishay Siliconix
Stock Quantity 122704 pcs Stock
Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 12V 3A SOT23-3
Lead Free Status / RoHS Status: ROHS3 Compliant
Vgs(th) (Max) @ Id 900mV @ 250µA
Vgs (Max) ±8V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-23-3 (TO-236)
Series TrenchFET®
Rds On (Max) @ Id, Vgs 50mOhm @ 3.85A, 4.5V
Power Dissipation (Max) 750mW (Ta)
Package / Case TO-236-3, SC-59, SOT-23-3
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 715 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Base Product Number SI2315

Packaging

We offer the highest quality, most economicallypriced static shield packaging available. With 40% light transparency, itallows for easy identification of IC's (integrated circuits) and PCB's (printedcircuit boards). The extremely durable buried metal contruction gives FaradayCage performance needed to effectively shield these componenets against staticcharge.

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



SI2315BDS-T1-E3 Product Details:

SI2315BDS-T1-E3: A Comprehensive Guide to Discrete Semiconductor Products In today's fast-paced technological world, electronic devices are becoming increasingly complex. As a result, many electronic products require discrete semiconductor products such as transistors to operate efficiently. One such critical component is the SI2315BDS-T1-E3, MOSFETs (Metal-Oxide Semiconductor Field-Effect Transistor) - Single. Product Model Number and Primary Features: The product model number, SI2315BDS-T1-E3, defines the MOSFET's P-Channel structure, which has a capacity for -12V and -3A and operates with a modest power capacity of 1.19W. The MOSFET's key features include a SOT23 package design that facilitates surface mount assembly, high-speed transistor switching capability, and a small surface area that reduces board space requirements. Classification and Application Scenarios: The SI2315BDS-T1-E3 belongs to a class of Discrete Semiconductor Products called MOSFETs - Single and operates with various device technologies, mainly P-MOSFET, unipolar transistors. It is perfect for loads under -12V bias systems, DC to DC Conversion Applications, portable devices, and battery chargers. This MOSFET is suitable for use on a wide range of electronic devices, including cellphones, cameras, portable audio, laptops, and tablet PCs. Usage and Feature Parameters: The SI2315BDS-T1-E3 MOSFET has a voltage breakdown, also known as a threshold voltage, of -2V and exhibits an RDS(on) of 140 mΩ max when the VGS (Gate-to-Source Voltage) equals -4.5V. The MOSFET has parameters that improve its efficiency, such as a 1.3 A continuous drain current lead-free version, improved thermal capabilities, and a range of storage and operating temperatures, usually between -55°C to 150°C. Types of Integrated Circuits: There are different types of integrated circuits such as digital, analog, mixed, and RF. MOSFETs belong to the analog type. Unlike digital circuits that operate on binary switches of "on or off" state, Analog circuits work on continuous signals, handling information in a more realistic manner. MOSFETs amplify signals and regulate energy output, minimizing power consumption in semiconductor devices. Complex Manufacturing Process: The manufacturing process for MOSFETs is a complex one, involving various techniques such as chip design, cutting, cleaning, laser processing, back grinding, doping, exposure, vapor deposition, etching, and more. These processes are important to ensure the accuracy, reliability, and stability of the device. Any variation in the manufacturing process can reduce product performance and reduce its lifespan. Packaging and Testing: The final process is packaging and testing. MOSFETs are mounted on tiny leads and encapsulated in layers of materials that provide electrical shielding and protection against physical damage. Testing is critical to check for specific parameters, including performance, packaging, and labeling. These tests ensure that finished products meet industry standards, government regulations, and customer specifications. In conclusion, the SI2315BDS-T1-E3 is a versatile and essential component in electronic devices. Its small size, excellent switching capabilities, high performance, and low power requirements make it a reliable choice for manufacturers. Its unique features, manufacturing process, and application scenarios have been discussed, ensuring its authority and academic nature. By highlighting its features, performance parameters, and application scenarios, engineers and designers can easily determine the MOSFET's compatibility with their electronic devices and applications.

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