Choose your country or region.

EnglishFrançaispolskiSlovenija한국의DeutschSvenskaSlovenskáMagyarországItaliaहिंदीрусскийTiếng ViệtSuomiespañolKongeriketPortuguêsภาษาไทยБългарски езикromânescČeštinaGaeilgeעִבְרִיתالعربيةPilipinoDanskMelayuIndonesiaHrvatskaفارسیNederland繁体中文Türk diliΕλλάδαRepublika e ShqipërisëአማርኛAzərbaycanEesti VabariikEuskeraБеларусьíslenskaBosnaAfrikaansIsiXhosaisiZuluCambodiaსაქართველოҚазақшаAyitiHausaКыргыз тилиGalegoCatalàCorsaKurdîLatviešuພາສາລາວlietuviųLëtzebuergeschmalaɡasʲМакедонскиMaoriМонголулсবাংলা ভাষারမြန်မာनेपालीپښتوChicheŵaCрпскиSesothoසිංහලKiswahiliТоҷикӣاردوУкраїна
Vishay Siliconix
SI4330DY-T1-E3 ImageView larger image
Image may be representation.
See specs for product details.

SI4330DY-T1-E3

Manufacturer Part Number:
SI4330DY-T1-E3
Manufacturer / Brand
Vishay Siliconix
Part of Description:
MOSFET 2N-CH 30V 6.6A 8-SOIC
Datasheets:
SI4330DY-T1-E3(1).pdfSI4330DY-T1-E3(2).pdf
Lead Free Status / RoHS Status:
ROHS3 Compliant
Stock Condition:
New original, Stock Available.
Ship From:
Hong Kong
Shipment Way:
DHL/Fedex/TNT/UPS

Inquiry Online

Please complete all required fields with your contact information.Click "SUBMIT REQUEST" we will contact you shortly by email. Or Email us: info@iccomponents-distributor.com
Part Number
Manufacturer
Require Quantity
Target Price(USD)
Company Name
Contact Name
E-mail
Phone
Message
Please enter Verify Code and click "Submit"
Part Number SI4330DY-T1-E3
Manufacturer / Brand Vishay Siliconix
Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 6.6A 8-SOIC
Lead Free Status / RoHS Status: ROHS3 Compliant
Vgs(th) (Max) @ Id 3V @ 250µA
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOIC
Series TrenchFET®
Rds On (Max) @ Id, Vgs 16.5mOhm @ 8.7A, 10V
Power - Max 1.1W
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds -
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.6A
Configuration 2 N-Channel (Dual)
Base Product Number SI4330

Packaging

We offer the highest quality, most economicallypriced static shield packaging available. With 40% light transparency, itallows for easy identification of IC's (integrated circuits) and PCB's (printedcircuit boards). The extremely durable buried metal contruction gives FaradayCage performance needed to effectively shield these componenets against staticcharge.

All the products will packing in anti-staticbag. Ship with ESD antistatic protection.
Outside ESD packing’s lable will use ourcompany’s information: Part Mumber, Brand and Quantity.
We will inspect all the goods before shipment,ensure all the products at good condition and ensure the parts are new originalmatch datasheet.
After all the goods are ensure no problems afterpacking, we will packing safely and send by global express. It exhibitsexcellent puncture and tear resistance along with good seal integrity.
We can offer worldwide express delivery service, such as DHLor FedEx or TNT or UPS or other forwarder for shipment.

Global Shipment by DHL/FedEx/TNT/UPS

Shipping Fees reference DHL/FedEx
1). You can offer your express delivery account for shipment, ifyou haven’t any express account for shipment, we can offer our account inadvance.
2). Use our account for shipment, Shipment charges(Reference DHL/FedEx, Different Countries has different price.)
Shipment charges: (Reference DHL and FedEX)
Weight(KG): 0.00kg-1.00kg Price(USD$) : USD$60.00
Weight(KG): 1.00kg-2.00kg Price(USD$) : USD$80.00
* The price of cost is reference with DHL/FedEx. The detail charges, please contact us. Different country the express charges are different.



SI4330DY-T1-E3 Product Details:

Title: "SI4330DY-T1-E3 MOSFET: Features, Applications, and Manufacturing Process Explained" In this article, we will provide an overview of the SI4330DY-T1-E3 MOSFET, an advanced discrete semiconductor product that belongs to the MOSFETs-Arrays category. We will discuss its essential features, applications, and manufacturing process to help you get a better idea of this cutting-edge technology. Features and Performance Parameters: The SI4330DY-T1-E3 MOSFET is a 2N-Channel device with a voltage capacity of 30V and a current rating of 6.6A. This MOSFET has an 8-SOIC package type, making it a compact and efficient solution for a wide range of power management applications. Its other noteworthy features include high accuracy, impressive efficiency, and a temperature range of -55°C to +175°C. Application Scenarios and Usage: The SI4330DY-T1-E3 MOSFET can be used in numerous electronic devices, including power supplies, voltage regulators, and battery management systems for laptops, mobile phones, and IoT devices. It is also suitable for various industries such as automotive, aerospace, and consumer electronics due to its high-performance capabilities, making it an ideal choice for highly sensitive applications that require precision and stable power management. Types of ICs: The SI4330DY-T1-E3 MOSFET belongs to the class of discrete semiconductor products and is used in applications that require high-performance power management. Analog, digital, mixed-signal, and RF integrated circuits are commonly used in various electronic devices, and the SI4330DY-T1-E3 MOSFET is an example of a digital IC. Manufacturing Process: The production of the SI4330DY-T1-E3 MOSFET is a complex process, involving cutting, cleaning, laser processing, back grinding, doping, exposure, vapor deposition, and etching, among other tasks. The various stages of the manufacturing process ensure high-quality components that can function efficiently in electronic devices. The finished products undergo appropriate packaging and testing to ensure component quality, providing customers with reliable and durable solutions. In conclusion, the SI4330DY-T1-E3 MOSFET is an essential component that offers high-performance, precision, and stable power management for various applications. Its compact size, impressive features, and complex manufacturing process make it an excellent choice for various electronic devices and industries. By understanding its main features, applications, and manufacturing process, customers can make informed decisions while choosing the right MOSFET for their specific needs.

You May Also Be Interested In: